CY14V101NA-BA25XI
IC NVSRAM 1MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V101NA-BA25XI is a 1Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. This component offers a fast 25 ns access time and a word/page write cycle time of 25 ns, ensuring efficient data handling. The memory organization is 64K x 16 bits, providing ample capacity for various data storage needs. Designed for surface mounting, it utilizes a compact 48-FBGA (6x10) package, suitable for space-constrained applications. Operating within a voltage range of 2.7V to 3.6V, and specified for an ambient temperature range of -40°C to 85°C, the CY14V101NA-BA25XI is engineered for reliability in demanding environments. This NVSRAM finds application in industrial control systems, automotive electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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