CY14V101LA-BA25XI
IC NVSRAM 1MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V101LA-BA25XI is a 1Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device. This component features a parallel interface with an access time of 25 ns, enabling rapid data retrieval. The memory organization is 128K x 8, delivering 1 Mbit of storage capacity. Designed for surface mount applications, it utilizes a compact 48-FBGA (6x10) package. Operating within a supply voltage range of 2.7V to 3.6V, the CY14V101LA-BA25XI maintains data integrity across an industrial temperature range of -40°C to 85°C (TA). Its non-volatile nature ensures data retention without continuous power, making it suitable for applications in industrial automation, telecommunications, and consumer electronics where persistent data storage is critical. The write cycle time for a word or page is 25ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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