CY14B116S-BZ35XIT
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B116S-BZ35XIT is a 16Mbit Non-Volatile SRAM (NVSRAM) memory integrated circuit. This component features a parallel interface with a fast access time of 35 ns. The memory organization is 512K x 32, providing ample data storage capacity. Designed for surface mount applications, it is packaged in a compact 165-FBGA (15x17) package, supplied on tape and reel. Operating over a temperature range of -40°C to 85°C, it supports a supply voltage of 2.7V to 3.6V. The write cycle time for this device is also 35 ns. This NVSRAM is suitable for applications requiring reliable data retention in industrial, communication, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 512K x 32 |
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