CY14B116S-BZ35XI
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies presents the CY14B116S-BZ35XI, a 16Mbit Non-Volatile SRAM (NVSRAM) memory component. This device features a parallel interface with an access time of 35 ns, enabling rapid data retrieval. The memory organization is configured as 512K words by 32 bits, providing substantial data handling capabilities. Operating within a voltage range of 2.7V to 3.6V, it is suitable for a variety of power-sensitive applications. The NVSRAM technology ensures data retention without requiring a continuous power supply. The component is housed in a 165-FBGA (15x17) package, designed for surface mounting. Its operating temperature range is -40°C to 85°C, making it robust for demanding environmental conditions. Applications for this component can be found in industrial control systems, automotive electronics, and data logging equipment where reliable, non-volatile data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 512K x 32 |
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