CY14B116S-BZ25XIT
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B116S-BZ25XIT is a 16Mbit Non-Volatile Static Random Access Memory (NVSRAM) component featuring a 25 ns access time. This memory device utilizes a parallel interface and is organized as 512K x 32 bits. The NVSRAM technology ensures data retention without requiring a continuous power supply, making it suitable for applications demanding persistent state storage. It operates from a supply voltage range of 2.7V to 3.6V and has a write cycle time of 25ns. The CY14B116S-BZ25XIT is available in a 165-FBGA (15x17) surface-mount package, supplied on tape and reel. This component is engineered for demanding applications in industries such as industrial automation, telecommunications, and consumer electronics where reliable, non-volatile data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512K x 32 |
| Programmable | Not Verified |