CY14B116S-BZ25XI
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B116S-BZ25XI is a 16Mbit Non-Volatile Static Random Access Memory (NVSRAM) device. This component features a parallel interface with a maximum access time of 25 ns and a word/page write cycle time of 25 ns. The memory organization is 512K x 32, providing 16Mbit of storage capacity. Operating within a supply voltage range of 2.7V to 3.6V, the CY14B116S-BZ25XI is designed for surface mount applications and comes in a 165-FBGA (15x17) package. Its operational temperature range is -40°C to 85°C (TA). This NVSRAM technology combines the speed of SRAM with data retention capabilities, making it suitable for applications requiring fast writes and reliable data storage, including industrial controls and advanced computing systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512K x 32 |
| Programmable | Not Verified |
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