CY14B116N-BA25XIT
IC NVSRAM 16MBIT PARALLEL 60FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B116N-BA25XIT is a 16Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device. This component features a parallel interface with an access time of 25 ns, enabling rapid data retrieval. The memory is organized as 1M x 16 bits, providing a substantial capacity for data storage. Operating within a supply voltage range of 2.7V to 3.6V, the CY14B116N-BA25XIT is designed for surface mount applications and comes in a compact 60-FBGA (10x18) package. Its non-volatile nature ensures data retention even when power is removed, making it suitable for applications requiring persistent data storage alongside fast read/write capabilities, such as in industrial control systems, automotive electronics, and telecommunications equipment. The component operates reliably across a temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 60-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 60-FBGA (10x18) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 1M x 16 |
| Programmable | Not Verified |
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