CY14B116M-BZ45XI
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B116M-BZ45XI is a 16Mbit NVSRAM (Non-Volatile SRAM) memory component with a parallel interface. This device offers a fast 45 ns access time and a 45 ns write cycle time, suitable for applications requiring both high speed and data retention. The memory organization is 1M x 16, and it operates within a voltage range of 2.7V to 3.6V. Packaged in a compact 165-FBGA (15x17) surface-mount form factor, this component is designed for demanding operating temperatures from -40°C to 85°C. Its non-volatile nature makes it ideal for applications in industrial control systems, automotive electronics, and data logging where data integrity is critical even during power loss.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 1M x 16 |
| Programmable | Not Verified |