CY14B108N-BA25XI
IC NVSRAM 8MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B108N-BA25XI is an 8Mbit Non-Volatile SRAM (NVSRAM) featuring a parallel interface. This device offers a fast access time of 25 ns and a word/page write cycle time of 25 ns, ensuring high-speed data operations. The memory is organized as 512K x 16 bits and operates from a supply voltage range of 2.7V to 3.6V. Designed for surface mounting, it comes in a compact 48-FBGA (6x10) package. This NVSRAM is suitable for applications requiring data retention during power loss, making it valuable in industrial automation, telecommunications, and consumer electronics. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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