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CY14B108L-ZS25XIT

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CY14B108L-ZS25XIT

IC NVSRAM 8MBIT PAR 44TSOP II

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies CY14B108L-ZS25XIT is an 8Mbit Non-Volatile SRAM (NVSRAM) memory integrated circuit. This device offers a 25 ns access time and a parallel memory interface, organized as 1M x 8. The NVSRAM technology ensures data retention without continuous power, making it suitable for applications requiring persistent data storage. It operates over a voltage range of 2.7V to 3.6V and features a write cycle time of 25ns. Designed for surface mounting, the component is delivered in a 44-TSOP II package. This NVSRAM is utilized in industrial and automotive sectors where reliable data integrity is paramount.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size8Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyNVSRAM (Non-Volatile SRAM)
Memory FormatNVSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization1M x 8
ProgrammableNot Verified

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