CY14B108L-ZS25XI
IC NVSRAM 8MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies' CY14B108L-ZS25XI is an 8Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device. This component features a parallel interface with an access time of 25 ns, enabling rapid data retrieval and storage. The memory organization is 1M x 8, suitable for applications requiring byte-wide data access. Operating within a supply voltage range of 2.7V to 3.6V, this NVSRAM maintains data integrity even during power loss without the need for external battery backup. Its robust NVSRAM technology combines the speed of SRAM with the non-volatility of EEPROM. The device is housed in a 44-TSOP II package, designed for surface mounting. Operating temperature range is -40°C to 85°C. This component finds application in industrial control systems, automotive electronics, and data acquisition systems where data retention is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 1M x 8 |
| Programmable | Not Verified |
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