CY14B108K-ZS45XI
IC NVSRAM 8MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY14B108K-ZS45XI is an 8Mbit Non-Volatile SRAM (NVSRAM) memory device. Featuring a parallel interface and organized as 1M x 8, this component offers a rapid 45 ns access time and a comparable 45 ns write cycle time. The CY14B108K-ZS45XI operates from a 2.7V to 3.6V supply voltage and is specified for industrial temperature ranges of -40°C to 85°C. It is housed in a 44-TSOP II package suitable for surface mounting. This NVSRAM technology combines the speed of SRAM with the data retention capabilities of EEPROM, making it suitable for applications requiring instant data saving and immediate recall, such as in industrial control systems, data acquisition, and point-of-sale terminals.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 1M x 8 |
| Programmable | Not Verified |
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