CY14B104NA-ZSP45XI
IC NVSRAM 4MBIT PAR 54TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-ZSP45XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory component featuring a parallel interface. This device offers a fast access time of 45 ns and a write cycle time of 45 ns. The memory is organized as 256K x 16 bits, providing a robust solution for applications requiring both the speed of SRAM and data retention without power. Operating within a supply voltage range of 2.7V to 3.6V, it is designed for reliable performance across an industrial temperature range of -40°C to 85°C. The CY14B104NA-ZSP45XI is housed in a 54-TSOP II package with a 0.400"" width, suitable for surface mount applications. This component finds utility in various industrial sectors where persistent data storage is critical, such as industrial automation and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 54-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 54-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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