CY14B104NA-ZSP25XI
IC NVSRAM 4MBIT PAR 54TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-ZSP25XI is a 4Mbit Non-Volatile SRAM memory device. This component offers a parallel interface with an access time of 25 ns, enabling rapid data retrieval. The memory organization is 256K x 16, providing efficient storage for data-intensive applications. Designed for surface mount installation, it operates within a temperature range of -40°C to 85°C and requires a supply voltage between 2.7V and 3.6V. The device is packaged in a 54-TSOP II (0.400", 10.16mm width) format, suitable for high-density board designs. Its NVSRAM technology ensures data retention without requiring a continuous power supply. This memory IC is utilized in various industrial sectors, including but not limited to, industrial automation, medical devices, and data logging systems, where reliable data integrity and fast access are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 54-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 54-TSOP II |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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