CY14B104NA-ZS45XET
IC NVSRAM 4MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-ZS45XET is a 4Mbit Non-Volatile SRAM (NVSRAM) memory component featuring a parallel interface. This device offers a fast access time of 45 ns, with a word/page write cycle time also at 45 ns. The memory organization is 256K x 16 bits, providing a robust solution for data retention without the need for external components. Operating within a supply voltage range of 3V to 3.63V, it is designed for reliable operation across an industrial temperature range of -40°C to 125°C. The CY14B104NA-ZS45XET is supplied in a 44-TSOP II package, suitable for surface mount applications. This component finds utility in various industrial applications requiring persistent data storage, such as industrial automation and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 3V ~ 3.63V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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