CY14B104NA-ZS25XI
IC NVSRAM 4MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-ZS25XI is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device featuring a parallel interface. This component offers a fast access time of 25 ns and a write cycle time of 25 ns. The memory organization is 256K x 16, providing a robust solution for data retention without external components. Operating within a voltage range of 2.7V to 3.6V, it is suitable for applications requiring persistent data storage in harsh environments, with an operating temperature range of -40°C to 85°C. The device is supplied in a 44-TSOP II package for surface mounting. This NVSRAM is commonly utilized in industrial automation, automotive systems, and communication infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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