CY14B104NA-ZS25XET
IC NVSRAM 4MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-ZS25XET is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. With an access time of 25 ns, this component provides rapid data retrieval. The memory is organized as 256K x 16 bits, offering substantial data storage capacity. Designed for surface mount applications, it utilizes a 44-TSOP II package, specifically a 44-TSOP (0.400"", 10.16mm Width). The operating temperature range is -40°C to 125°C (TA), making it suitable for demanding environments. This NVSRAM operates from a supply voltage of 3V to 3.6V and offers a word/page write cycle time of 25 ns. Applications for this component can be found in industrial automation, telecommunications, and high-reliability computing systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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