CY14B104NA-ZS20XI
IC NVSRAM 4MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-ZS20XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory component with a parallel interface. This device offers a fast 20 ns access time and a 20 ns write cycle time, making it suitable for applications demanding rapid data retention and retrieval. Its memory organization is 256K x 16, providing a robust solution for data logging, configuration storage, and industrial control systems. The CY14B104NA-ZS20XI operates within a 2.7V to 3.6V supply voltage range and is housed in a 44-TSOP II surface-mount package, designed for reliable integration into complex printed circuit boards. This component is utilized across various industries including automotive, industrial automation, and telecommunications where persistent data storage with SRAM-like speed is critical. The operating temperature range is -40°C to 85°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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