CY14B104NA-BA45XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-BA45XI is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device with a parallel interface. This memory IC offers a 45 ns access time and a 45 ns word/page write cycle time, ensuring efficient data handling. The memory organization is 256K x 16, providing ample capacity for data storage. Operating across a voltage range of 2.7V to 3.6V, the CY14B104NA-BA45XI is designed for surface mount applications and comes in a compact 48-FBGA (6x10) package. Its robust construction supports an operating temperature range of -40°C to 85°C. This component is suitable for applications in industrial automation, medical devices, and telecommunications where data retention and fast write speeds are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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