CY14B104NA-BA45XET
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-BA45XET is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) component. This parallel interface device offers an access time of 45 ns and a word/page write cycle time of 45 ns. The memory is organized as 256K x 16, providing a robust solution for data retention without the need for external batteries. Designed for surface mount applications, it features a compact 48-FBGA (6x10) package. The operating voltage range is 3V to 3.6V, with an operating temperature range of -40°C to 125°C. This component is suitable for applications requiring fast write speeds and guaranteed data integrity in industrial, automotive, and communication systems where power loss is a concern.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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