CY14B104NA-BA25XIT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-BA25XIT is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device featuring a parallel interface. This component offers a fast access time of 25 ns and a word write cycle time of 25 ns, ensuring efficient data handling. The memory organization is 256K x 16, providing ample capacity for demanding applications. Operating from a supply voltage range of 2.7V to 3.6V, it is designed for surface mount applications within a -40°C to 85°C operating temperature range. The device is housed in a compact 48-FBGA (6x10) package. Its non-volatile nature, combining the speed of SRAM with data retention, makes it suitable for industrial control systems, automotive electronics, and data logging applications where data integrity is critical during power loss.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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