CY14B104NA-BA25XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY14B104NA-BA25XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. This component offers a fast 25 ns access time and a write cycle time of 25 ns, ensuring high performance for critical data retention applications. The memory organization is 256K x 16, and it operates over a voltage range of 2.7V to 3.6V. The CY14B104NA-BA25XI is packaged in a compact 48-FBGA (6x10) with a surface mount type, suitable for demanding designs. Operating within an industrial temperature range of -40°C to 85°C, this NVSRAM is ideal for applications in industrial automation, medical equipment, and telecommunications where data integrity and fast access are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
S25FL256SDSMFA000
IC FLASH 256MBIT SPI/QUAD 16SOIC
CG9199AM
IC MEMORY
S27KL0643GABHV020
IC PSRAM 64MBIT SPI/OCTAL 24FBGA
