CY14B104NA-BA25I
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY14B104NA-BA25I is a 4Mbit Non-Volatile SRAM memory device featuring a parallel interface. This NVSRAM offers a fast 25 ns access time and a 25 ns write cycle time, organized as 256K x 16. The CY14B104NA-BA25I operates from a 2.7V to 3.6V supply and is housed in a compact 48-FBGA (6x10) package suitable for surface mounting. Its non-volatile nature ensures data retention without a continuous power source. This component is well-suited for applications in industrial automation, medical devices, and consumer electronics where reliable data storage and fast access are critical. The operating temperature range is -40°C to 85°C (TA).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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