CY14B104NA-BA20XIT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-BA20XIT is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device with a parallel interface. This component offers a 20 ns access time and a word/page write cycle time of 20 ns, ensuring high-speed data operations. The memory organization is 256K x 16, supporting robust data handling. Operating within a voltage range of 2.7V to 3.6V, it is designed for surface mount applications with a 48-FBGA (6x10) package, supplied on tape and reel. The CY14B104NA-BA20XIT is suitable for applications requiring data retention during power loss, commonly found in industrial control systems, automotive electronics, and communication infrastructure. Its operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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