CY14B104NA-BA20XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104NA-BA20XI is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device. This parallel interface memory offers a fast 20 ns access time and a 20 ns write cycle time. Its memory organization is 256K x 16, and it operates from a supply voltage range of 2.7V to 3.6V. The CY14B104NA-BA20XI features a 48-FBGA (6x10) package, suitable for surface mount applications. This component is engineered for demanding applications requiring data retention without external power, commonly found in industrial automation, automotive systems, and data logging equipment. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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