CY14B104N-BA25XIT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104N-BA25XIT is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. This component offers a fast access time of 25 ns and a word/page write cycle time of 25 ns, making it suitable for applications demanding rapid data storage and retrieval. The memory organization is 256K x 16, providing ample capacity for various data logging and configuration storage needs. Operating within a voltage range of 2.7V to 3.6V and an ambient temperature range of -40°C to 85°C, the CY14B104N-BA25XIT is designed for reliability in demanding environments. Its 48-FBGA (6x10) package and surface mount capability facilitate efficient board design. This device is commonly employed in industrial automation, embedded systems, and data acquisition applications where data persistence without a separate battery backup is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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