CY14B104N-BA25XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104N-BA25XI is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device featuring a parallel interface. This component provides a 25 ns access time and a memory organization of 256K x 16, ensuring rapid data retrieval and storage. Operating within a supply voltage range of 2.7V to 3.6V, the CY14B104N-BA25XI is designed for robust performance across an industrial temperature range of -40°C to 85°C (TA). The device is housed in a compact 48-FBGA (6x10) package, suitable for surface mount applications. Its non-volatile nature makes it ideal for applications requiring data retention without continuous power, commonly found in industrial automation, telecommunications, and data acquisition systems. The write cycle time for both word and page operations is 25 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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