CY14B104N-BA25XCT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104N-BA25XCT, a 4Mbit Non-Volatile SRAM (NVSRAM) memory device, offers parallel access with an organization of 256K x 16. This surface-mount component features a fast 25 ns access time and a 25 ns write cycle time for word and page operations. Operating within a voltage range of 2.7V to 3.6V, it is housed in a compact 48-FBGA (6x10) package, delivered on tape and reel. The CY14B104N-BA25XCT is suitable for applications requiring persistent data storage with SRAM-like speed, finding use in industrial automation, telecommunications, and consumer electronics. Its operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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