CY14B104N-BA25XC
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104N-BA25XC is a 4Mbit Non-Volatile Static Random Access Memory (NVSRAM) device. This parallel interface memory offers a fast access time of 25 ns and a write cycle time of 25 ns. The memory organization is 256K words by 16 bits, delivering a robust solution for data retention applications. Operating within a supply voltage range of 2.7V to 3.6V, this component is suitable for applications requiring reliable data storage even during power loss. The CY14B104N-BA25XC is presented in a 48-FBGA (6x10) surface mount package, commonly utilized in industrial control systems, computing, and medical devices where persistent data integrity is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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