CY14B104N-BA20XIT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104N-BA20XIT is a 4Mbit Non-Volatile Static Random Access Memory (NVSRAM) device featuring a parallel interface with a 20 ns access time. This memory IC is organized as 256K words by 16 bits, providing a robust solution for data retention in the event of power loss. The CY14B104N-BA20XIT operates within a voltage range of 2.7V to 3.6V and is housed in a compact 48-FBGA (6x10) surface-mount package. Its reliable non-volatile data storage and fast access speeds make it suitable for demanding applications in industrial automation, automotive systems, and telecommunications infrastructure where data integrity is critical. The component is supplied on a Tape & Reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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