CY14B104N-BA20XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104N-BA20XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device. Featuring a parallel interface and organized as 256K x 16, this component offers a rapid 20 ns access time. The CY14B104N-BA20XI utilizes NVSRAM technology, ensuring data retention without external power. It operates from a supply voltage range of 2.7V to 3.6V and has a word/page write cycle time of 20 ns. The device is supplied in a 48-FBGA (6x10) surface-mount package and is rated for an operating temperature range of -40°C to 85°C. This NVSRAM is suitable for applications requiring high-speed data storage with inherent data integrity, commonly found in industrial control systems, telecommunications, and data logging equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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