CY14B104N-BA20XCT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104N-BA20XCT is a 4Mbit Non-Volatile SRAM (NVSRAM) memory IC. This parallel interface device features an access time of 20 ns and is organized as 256K x 16. The NVSRAM technology ensures data retention without a continuous power supply. Designed for surface mount applications, it is supplied in a 48-FBGA (6x10) package on tape and reel. Operating within a voltage range of 2.7V to 3.6V, this component is suitable for demanding applications across industrial, consumer electronics, and automotive sectors requiring reliable data storage and rapid access. The write cycle time for a word or page is 20ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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