CY14B104LA-ZS45XI
IC NVSRAM 4MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY14B104LA-ZS45XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory component featuring a parallel interface. This device offers a fast access time of 45 ns and a word/page write cycle time of 45 ns, enabling efficient data handling. The memory organization is 512K x 8, providing a substantial storage capacity. Operating within a supply voltage range of 2.7V to 3.6V, it is designed for surface mount applications and comes in a 44-TSOP II package. Its non-volatile nature ensures data retention even without power. This component is suitable for applications requiring persistent data storage and rapid read/write operations, commonly found in industrial automation, automotive systems, and communication infrastructure. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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