CY14B104LA-ZS20XI
IC NVSRAM 4MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104LA-ZS20XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory component featuring a parallel interface. This device offers a fast 20ns access time and a word write cycle time of 20ns, ensuring efficient data handling. The memory organization is 512K x 8, and it operates within a supply voltage range of 2.7V to 3.6V. Designed for surface mounting, it is supplied in a 44-TSOP II package, measuring 0.400" (10.16mm) in width. The operating temperature range for this component is -40°C to 85°C. This NVSRAM is suitable for applications requiring persistent data storage with SRAM-like performance, commonly found in industrial control, automotive, and data logging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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