CY14B104LA-BA25XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104LA-BA25XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. This component offers a fast access time of 25 ns, enabling efficient data retrieval and storage. The memory organization is 512K x 8, providing a robust solution for applications requiring persistent data retention even during power loss. Designed for surface mount installation, it is supplied in a compact 48-FBGA (6x10) package. The operating temperature range of -40°C to 85°C (TA) makes it suitable for demanding environments. This NVSRAM is utilized in various industrial sectors, including but not limited to, industrial automation, telecommunications, and automotive systems. The device operates with a supply voltage between 2.7V and 3.6V, and the write cycle time is 25ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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