Home

Products

Integrated Circuits (ICs)

Memory

Memory

CY14B104L-ZS25XI

Banner
productimage

CY14B104L-ZS25XI

IC NVSRAM 4MBIT PAR 44TSOP II

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies CY14B104L-ZS25XI is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device. This component features a parallel interface with a memory organization of 512K words by 8 bits. It offers a fast access time of 25 ns, making it suitable for high-performance applications. The CY14B104L-ZS25XI operates with a supply voltage range of 2.7V to 3.6V. Its non-volatile nature ensures data retention without a separate power source. This device is packaged in a 44-TSOP II (Thin Small Outline Package II) with a 0.400" width, designed for surface mounting. The operating temperature range is -40°C to 85°C (TA). This NVSRAM is commonly utilized in industrial automation, automotive systems, and telecommunications infrastructure where reliable data storage and fast recall are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyNVSRAM (Non-Volatile SRAM)
Memory FormatNVSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization512K x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
S25FL128SDSMFA003

IC FLASH 128MBIT SPI/QUAD 16SOIC

product image
CG8830AMT

IC MEMORY

product image
CY7C1305TV25-167BZXC

IC SRAM 18MBIT PAR 165FBGA