CY14B104L-ZS20XCT
IC NVSRAM 4MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104L-ZS20XCT is a 4Mbit Non-Volatile SRAM memory integrated circuit. This device features a parallel interface with an access time of 20 ns, suitable for applications requiring rapid data retrieval and storage. The memory organization is 512K x 8, providing ample capacity for data buffering and configuration storage. Operating within a voltage range of 2.7V to 3.6V, it is designed for efficient power consumption. The NVSRAM technology ensures data retention without requiring a constant power supply, making it ideal for systems where data integrity during power interruptions is critical. The CY14B104L-ZS20XCT is supplied in a 44-TSOP II package, facilitating surface-mount assembly. This component finds application in industrial automation, medical devices, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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