CY14B104L-BA25XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B104L-BA25XI is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. With an access time of 25 ns, this component is organized as 512K x 8 and operates from a 2.7V to 3.6V supply. The NVSRAM technology ensures data retention without a continuous power supply, making it suitable for applications requiring instant data recall upon power-up. The CY14B104L-BA25XI is housed in a 48-FBGA (6x10) package, designed for surface mounting. This memory solution is engineered for demanding applications in sectors such as industrial automation, telecommunications, and automotive systems where reliable data persistence and fast access are critical. The device supports a write cycle time of 25 ns for word and page operations and operates within an ambient temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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