CY14B104L-BA20XCT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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The Infineon Technologies CY14B104L-BA20XCT is a 4Mbit NVSRAM memory device featuring a parallel interface with a fast 20 ns access time. This non-volatile static RAM offers a 512K x 8 memory organization, allowing for efficient data storage and retrieval. Designed for surface mount applications, it is supplied in a compact 48-FBGA (6x10) package on tape and reel. The device operates within a voltage range of 2.7V to 3.6V and has a word/page write cycle time of 20 ns. This component is suitable for applications requiring robust data retention and high-speed access, commonly found in industrial automation, medical devices, and communication infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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