CY14B101NA-ZS45XI
IC NVSRAM 1MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B101NA-ZS45XI is a 1Mbit Non-Volatile SRAM memory device featuring a parallel interface. This component offers a fast access time of 45 ns and a word/page write cycle time of 45 ns, ensuring efficient data handling. The memory organization is 64K x 16, providing ample capacity for data storage. Operating within a voltage range of 2.7V to 3.6V, the CY14B101NA-ZS45XI is designed for surface mount applications, packaged in a 44-TSOP II (0.400", 10.16mm width) for robust integration. Its operating temperature range of -40°C to 85°C makes it suitable for demanding environments. This NVSRAM technology combines the speed of SRAM with the data retention of non-volatile memory, finding application in industrial controls, automotive systems, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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