CY14B101NA-ZS25XIT
IC NVSRAM 1MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies' CY14B101NA-ZS25XIT is a 1Mbit Non-Volatile SRAM memory device featuring a parallel interface. This NVSRAM offers a fast 25 ns access time and a memory organization of 64K x 16. Operating within a supply voltage range of 2.7V to 3.6V, it maintains data retention without external power, making it ideal for applications requiring instant data backup and retrieval. The device is supplied in a 44-TSOP II surface-mount package, designed for efficient board integration. Its robust performance and non-volatile nature are critical in industrial automation, medical devices, and telecommunications systems where data integrity is paramount. The write cycle time for a word or page is also 25 ns. This component is suitable for operation across a temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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