CY14B101NA-ZS25XI
IC NVSRAM 1MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B101NA-ZS25XI is a 1Mbit NVSRAM (Non-Volatile SRAM) memory device featuring a parallel interface and a fast 25 ns access time. This memory component is organized as 64K x 16 bits and operates over a voltage range of 2.7V to 3.6V. The CY14B101NA-ZS25XI utilizes NVSRAM technology, combining the speed of SRAM with the data retention of non-volatile memory. It is supplied in a 44-TSOP II surface mount package, suitable for high-density board designs. The operating temperature range is -40°C to 85°C. Applications for this component include industrial control systems, automotive electronics, and data logging solutions where persistent data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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