CY14B101LA-ZS25XI
IC NVSRAM 1MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B101LA-ZS25XI is a 1Mbit NVSRAM memory component featuring a parallel interface with an access time of 25 ns. This device offers non-volatile data retention, eliminating the need for battery backup in many applications. The memory is organized as 128K x 8 and is housed in a 44-TSOP II surface-mount package. Operating within a supply voltage range of 2.7V to 3.6V, it is suitable for industrial and automotive environments with an operating temperature range of -40°C to 85°C. The write cycle time for this NVSRAM is also 25 ns. This component finds application in systems requiring reliable data storage and fast read/write operations, such as industrial control, data logging, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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