CY14B101LA-ZS20XI
IC NVSRAM 1MBIT PAR 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B101LA-ZS20XI is a 1Mbit NVSRAM (Non-Volatile SRAM) memory integrated circuit. This component features a parallel interface with an access time of 20 ns and a word write cycle time of 20 ns. Its memory organization is 128K x 8, providing a total density of 1Mbit. Operating within a supply voltage range of 2.7V to 3.6V, it maintains data retention without requiring an external battery, making it suitable for applications demanding persistent data storage during power loss. The device is housed in a 44-TSOP II package, a surface-mount type with a 0.400" (10.16mm) width, and operates across an ambient temperature range of -40°C to 85°C. Industries including industrial automation, telecommunications, and consumer electronics commonly utilize this type of non-volatile memory solution.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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