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CY14B101LA-SZ25XIT

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CY14B101LA-SZ25XIT

IC NVSRAM 1MBIT PARALLEL 32SOIC

Manufacturer: Infineon Technologies

Categories: Memory

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Infineon Technologies CY14B101LA-SZ25XIT is a 1Mbit parallel NVSRAM memory device offering a fast 25 ns access time. This non-volatile SRAM features a memory organization of 128K x 8, suitable for applications requiring data retention without a continuous power supply. The device operates with a supply voltage range of 2.7V to 3.6V and supports a write cycle time of 25 ns for word and page operations. Packaged in a 32-SOIC (0.295", 7.50mm width) surface-mount format, it is supplied on tape and reel. The CY14B101LA-SZ25XIT is designed for reliable operation across an industrial temperature range of -40°C to 85°C. This component finds application in industrial automation, automotive systems, and data logging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case32-SOIC (0.295"", 7.50mm Width)
Mounting TypeSurface Mount
Memory Size1Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyNVSRAM (Non-Volatile SRAM)
Memory FormatNVSRAM
Supplier Device Package32-SOIC
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization128K x 8
ProgrammableNot Verified

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