CY14B101LA-SZ25XI
IC NVSRAM 1MBIT PARALLEL 32SOICManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14B101LA-SZ25XI is a 1Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface and a 25 ns access time. This component is organized as 128K x 8 and operates within a 2.7V to 3.6V supply voltage range. The CY14B101LA-SZ25XI utilizes NVSRAM technology, providing data retention without requiring an external battery. Its 32-SOIC package is designed for surface mounting, with a 7.50mm width. The device supports a write cycle time of 25ns for word and page operations. This NVSRAM is suitable for applications requiring non-volatile data storage in industrial, automotive, and communication systems where data integrity is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-SOIC (0.295"", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 32-SOIC |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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