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IJW120R100T1FKSA1

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IJW120R100T1FKSA1

JFET N-CH 1.2KV 26A TO247-3

Manufacturer: Infineon Technologies

Categories: JFETs

Quality Control: Learn More

Infineon Technologies CoolSiC™ JFET N-Channel, part number IJW120R100T1FKSA1, offers a 1200V drain-source breakdown voltage with a continuous drain current capability of 26A. This device features an on-resistance of 100 mOhms and a maximum power dissipation of 190W. Designed with a N-Channel FET type, it is housed in a PG-TO247-3 package suitable for through-hole mounting. Key parameters include a typical input capacitance (Ciss) of 1550pF at 19.5V (VGS). The operating temperature range is -55°C to 175°C (TJ). This component is utilized in high-voltage power conversion applications across industries such as industrial automation, renewable energy systems, and electric vehicle charging infrastructure.

Additional Information

Series: CoolSiC™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS)1200 V
Current Drain (Id) - Max26 A
Supplier Device PackagePG-TO247-3
Drain to Source Voltage (Vdss)1200 V
Power - Max190 W
Resistance - RDS(On)100 MOhms
Current - Drain (Idss) @ Vds (Vgs=0)1.5 µA @ 1200 V

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