P2000DL45X168HPSA1
PRESS PACK IGBTManufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies P2000DL45X168HPSA1 is a high-power Press Pack IGBT module featuring Trench IGBT technology for enhanced performance. This single-configuration module offers a maximum collector-emitter voltage of 4500 V and a continuous collector current capability of 2000 A. The IGBT exhibits a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-emitter voltage and 2000 A. Input capacitance (Cies) is rated at 420 nF at 25 V. Designed for robust thermal management, it is chassis-mounted and operates within a temperature range of -40°C to 150°C (TJ). The module utilizes the BG-P16826K-1 package. Applications for this component are found in high-voltage DC power transmission, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-200AF |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 2000A |
| NTC Thermistor | No |
| Supplier Device Package | BG-P16826K-1 |
| IGBT Type | Trench |
| Current - Collector (Ic) (Max) | 2000 A |
| Voltage - Collector Emitter Breakdown (Max) | 4500 V |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 420 nF @ 25 V |
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