P2000DL45X168APTHPSA1
PRESS PACK IGBT BG-P16826K-1Manufacturer: Infineon Technologies
Categories: IGBT Modules
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Infineon Technologies P2000DL45X168APTHPSA1 is a single Trench IGBT module designed for high-power applications. This component features a robust 4500 V collector-emitter breakdown voltage and can handle a maximum continuous collector current of 2000 A. The module utilizes Trench IGBT technology for optimized switching performance and a low on-state voltage drop of 2.5 V at 15 V gate-emitter voltage and 2000 A collector current. Input capacitance (Cies) is rated at 420 nF at 25 V. The P2000DL45X168APTHPSA1 is housed in a Chassis Mount package, specifically the DO-200AE, with the supplier device package identified as BG-P16826K-1. Operating temperature ranges from -40°C to 150°C (TJ). This module is typically employed in demanding industries such as industrial motor drives, power grid systems, and high-energy physics research. The component is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | DO-200AE |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 2000A |
| NTC Thermistor | No |
| Supplier Device Package | BG-P16826K-1 |
| IGBT Type | Trench |
| Current - Collector (Ic) (Max) | 2000 A |
| Voltage - Collector Emitter Breakdown (Max) | 4500 V |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 420 nF @ 25 V |
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