IRG7T100HF12A
IGBT MOD 1200V 200A POWIR 34Manufacturer: Infineon Technologies
Categories: IGBT Modules
Quality Control: Learn More
Infineon Technologies IRG7T100HF12A is a half-bridge IGBT module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 200 A. The module offers a maximum power dissipation of 575 W and a Vce(on) of 2.2V at 15V gate-emitter voltage and 100A collector current. Input capacitance (Cies) is rated at 13.7 nF at 25 V. The IRG7T100HF12A is chassis mountable and operates within an industrial temperature range of -40°C to 150°C (TJ). The POWIR® 34 package provides efficient thermal management. This device is utilized in industrial and automotive sectors requiring robust power switching capabilities.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | POWIR® 34 Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | POWIR® 34 |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 575 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 13.7 nF @ 25 V |
Request a Quote
Clients Also Buy
BSM400GA170DLS
IGBT MODULE
F3L225R12W3H3B11BPSA1
IGBT MODULE
F43L50R07W2H3FB11BPSA2
IGBT MOD 650V 50A 20MW
